Title :
GaAs-loaded metal waveguide components for high-speed low-VSWR optoelectronic millimetre-wave switching
Author :
Platte, W. ; Gl¿¿ckler, R. ; Brand, H.
Author_Institution :
Universitÿt Erlangen-Nÿrnberg, Institut fÿr Hochfrequenztechnik, Erlangen, West Germany
Abstract :
A new approach to fast optoelectronic microwave and millimetre-wave switching is reported. The concept is based on a metal waveguide section containing a thin slab of semi-insulating GaAs. Modulation or switching is achieved by wave attenuation across a laser-induced photoconductive plasma wedge generated within the GaAs slab via edge excitation. First experimental results in the 30¿35 GHz range are presented.
Keywords :
III-V semiconductors; gallium arsenide; optoelectronic devices; photoconducting devices; semiconductor switches; solid-state microwave devices; waveguide components; EHF; GaAs slab; GaAs-loaded metal waveguide components; III-V semiconductors; Ka-band; experimental results; fast optoelectronic microwave; frequency 30 to 35 GHz; high-speed; laser-induced photoconductive plasma wedge; low-VSWR; microwave switching; millimetre-wave switching; mm-wave; semi-insulating GaAs; wave attenuation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840420
