DocumentCode
993357
Title
Optimisation of modulation-doped heterostructures for TEGFET operation at room temperature
Author
D¿¿mbkes, H. ; Brockerhoff, W. ; Heime, K. ; Ploog, K. ; Weimann, G. ; Schlapp, W.
Author_Institution
Universitÿt-Gesamthochschule-Duisburg, Duisburg, West Germany
Volume
20
Issue
15
fYear
1984
Firstpage
615
Lastpage
617
Abstract
Optimisation of selectively doped (AlGa)As/GaAs heterostructures for TEGFET applications at room temperature is reported. The introduction of a thick (>0.1 ¿m) highly doped GaAs top layer considerably reduces parasitic resistances and improves device performance. Best results for 1.4 ¿m gate length at room temperature are: transconductance 220 mS/mm; source resistance 0.2¿0.4 mm; contact resistance less than 0.1 ¿ mm and cutoff frequency 25 GHz. Results from comparable structures without a thick top layer are inferior by about 25%.
Keywords
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; optimisation; semiconductor superlattices; (AlGa)As/GaAs modulation doped heterostructures; III-V semiconductors; TEGFET; contact resistance; cutoff frequency; gate length 1.4 microns; highly doped GaAs top layer; optimisation; parasitic resistances; source resistance; transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840424
Filename
4248907
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