Title :
Optimisation of modulation-doped heterostructures for TEGFET operation at room temperature
Author :
D¿¿mbkes, H. ; Brockerhoff, W. ; Heime, K. ; Ploog, K. ; Weimann, G. ; Schlapp, W.
Author_Institution :
Universitÿt-Gesamthochschule-Duisburg, Duisburg, West Germany
Abstract :
Optimisation of selectively doped (AlGa)As/GaAs heterostructures for TEGFET applications at room temperature is reported. The introduction of a thick (>0.1 ¿m) highly doped GaAs top layer considerably reduces parasitic resistances and improves device performance. Best results for 1.4 ¿m gate length at room temperature are: transconductance 220 mS/mm; source resistance 0.2¿0.4 mm; contact resistance less than 0.1 ¿ mm and cutoff frequency 25 GHz. Results from comparable structures without a thick top layer are inferior by about 25%.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; optimisation; semiconductor superlattices; (AlGa)As/GaAs modulation doped heterostructures; III-V semiconductors; TEGFET; contact resistance; cutoff frequency; gate length 1.4 microns; highly doped GaAs top layer; optimisation; parasitic resistances; source resistance; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840424
