DocumentCode
993380
Title
Effective recombination velocity of polysilicon contacts for bipolar transistors
Author
Bakker, G.W. ; Roulston, D.J. ; Eltoukhy, A.A.
Author_Institution
University of Waterloo, Department of Electrical Engineering, Waterloo, Canada
Volume
20
Issue
15
fYear
1984
Firstpage
622
Lastpage
624
Abstract
The effective surface recombination velocity is determined analytically for a doped polysilicon contact to the emitter of a bipolar transistor in the presence of a thin interfacial oxide layer. Results are presented for various doping levels, oxide thicknesses and barrier heights. The analysis considers both tunnelling and thermionic emission through the interface.
Keywords
bipolar transistors; electrical contacts; electron-hole recombination; barrier heights; bipolar transistors; doped polysilicon contact; doping levels; interfacial oxide layer; polycrystalline Si; surface recombination velocity; thermionic emission; tunnelling;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840428
Filename
4248913
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