Title :
Effective recombination velocity of polysilicon contacts for bipolar transistors
Author :
Bakker, G.W. ; Roulston, D.J. ; Eltoukhy, A.A.
Author_Institution :
University of Waterloo, Department of Electrical Engineering, Waterloo, Canada
Abstract :
The effective surface recombination velocity is determined analytically for a doped polysilicon contact to the emitter of a bipolar transistor in the presence of a thin interfacial oxide layer. Results are presented for various doping levels, oxide thicknesses and barrier heights. The analysis considers both tunnelling and thermionic emission through the interface.
Keywords :
bipolar transistors; electrical contacts; electron-hole recombination; barrier heights; bipolar transistors; doped polysilicon contact; doping levels; interfacial oxide layer; polycrystalline Si; surface recombination velocity; thermionic emission; tunnelling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840428
