DocumentCode
993399
Title
Amplifier-modulator integrated with a cleaved-coupled-cavity injection laser
Author
Lee, T.P. ; Burrus, C.A. ; Eisenstein, Gadi ; Sessa, W.B. ; Besomi, P.
Author_Institution
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Volume
20
Issue
15
fYear
1984
Firstpage
625
Lastpage
627
Abstract
We have demonstrated an external amplifier-modulator integrated with a cleaved-coupled-cavity injection laser on the same 1.3 ¿m InGaAsP/InP laser chip. The maximum available gain was 20 at an input power of ¿19.2 dBm, and it reduced to 10 at an input power of ¿10.5 dBm. High on/off extinction ratios and side-mode suppression >100:1 were achieved at about 1 Gbit/s (NRZ) modulation rate.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; InGaAsP/InP laser chip; amplifier-modulator; cleaved-coupled-cavity injection laser; modulation rate; on/off extinction ratios; semiconductor junction laser; side-mode suppression;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840430
Filename
4248915
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