Three-Dimensional Photodetectors in 3-D Silicon-On-Insulator Technology

Author

Culurciello, Eugenio ; Weerakoon, Pujitha

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT

Volume

28

Issue

2

fYear

2007

Firstpage

117

Lastpage

119

Abstract

We report on the design and measurement results of three-dimensional (3-D) photodetectors in a 0.18-mum silicon-on-insulator technology. The device measurements reported here show that the photodetectors can be used for the design of high-density imaging arrays in 3-D CMOS fabrication processes. The photodiodes respond to light in the range of 1-200 000 lx with currents of 2 fA to 300 pA and can be arranged in a 3-D stack. The phototransistors respond to light intensities of 5-200 000 lx with currents from 50 fA to 2.3 muA

Keywords

CMOS integrated circuits; photodetectors; photodiodes; semiconductor device measurement; silicon-on-insulator; 0.18 micron; 3D integration; 3D photodetectors; 3D silicon on insulator; SOI; device measurements; photodiode; phototransistor; CMOS image sensors; CMOS technology; Image sensors; Laboratories; Photodetectors; Photodiodes; Phototransistors; Sensor arrays; Silicon on insulator technology; Stacking; Photodetector; photodiode; phototransistor; silicon-on-insulator (SOI); three-dimensional (3-D) integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.889042

Filename

4068944