A 20-V CMOS-Based Monolithic Bidirectional Power Switch

Author

Fu, Y. ; Cheng, X. ; Chen, Y. ; Liou, J.J. ; Shen, Z.J.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Central Florida Univ., Orlando, FL

Volume

28

Issue

2

fYear

2007

Firstpage

174

Lastpage

176

Abstract

Bidirectional power-switching devices are needed in many power-management applications, particularly in lithium-ion battery protection circuitry. In this letter, a monolithic planar bidirectional power switch fabricated with a simplified CMOS technology is introduced. The new four-terminal device provides a blocking voltage greater than 20 V and a low on-resistance in either direction between its two power terminals. Detailed device characterization and analysis reveal that the new device structure has good latch-up immunity even though it comprises several p-n junctions in close proximity. This new CMOS-compatible power switch can be used in discrete form or as part of a power IC

Keywords

CMOS integrated circuits; power integrated circuits; power semiconductor switches; 20 V; CMOS technology; four-terminal device; latch-up immunity; lithium ion battery protection circuitry; monolithic bidirectional power switch; p-n junctions; power IC; power management; Batteries; CMOS technology; MOSFET circuits; P-n junctions; Power MOSFET; Power integrated circuits; Power semiconductor switches; Protection; Switching circuits; Voltage; Battery protection circuitry; bidirectional switch; on-resistance; power MOSFET;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.889509

Filename

4068946