Title :
1.3-μm GaInAsN Vertical-Cavity Surface-Emitting Lasers by Oxide-Planarized and Surface-Relief Processes for Single-Mode Operation
Author :
Lee, Feng-Ming ; Tsai, Chia-Lung ; Hu, Chih-Wei ; Huang, Kun-Fu ; Wu, Meng-Chyi ; Ko, Sun-Chien
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
Abstract :
In this letter, we investigate and characterize the 1.3-mum single-mode vertical-cavity surface-emitting lasers (VCSELs) with two GaInAsN strained multiple quantum wells as the active region. Surface relief technique and a thick silicon oxide were used for the spatial mode filtering and the planarization processing, respectively. The VCSELs with a 5-mum-diameter surface-relief aperture and a 12-mum-diameter oxide-confined aperture at room temperature exhibit a threshold current of 3 mA, a slope efficiency of 0.14 mW/mA, a maximum operation temperature of 90 degC, and a single-mode behavior. These VCSELs show a maximum light output power of 1 mW for the single fundamental mode with a transverse-mode suppression of more than 30 dB and also show a clear eye-opening feature operated at 2.488 Gb/s and 12.6 mA
Keywords :
III-V semiconductors; gallium compounds; indium compounds; planarisation; quantum well devices; silicon compounds; surface emitting lasers; wide band gap semiconductors; 1 mW; 1.3 micron; 12.6 mA; 2.488 Gbit/s; 90 C; GaInAsN; SiO; VCSEL; multiple quantum wells; oxide planarization; single mode operation; spatial mode filtering; surface relief; transverse mode suppression; vertical cavity surface emitting lasers; Apertures; Filtering; Laser modes; Planarization; Quantum well lasers; Silicon; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers; $hbox{SiO}_{x}$ planarization process; GaInAsN; planar-type vertical-cavity surface-emitting lasers (VCSELs); surface relief;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.889512
