Title :
Fabrication of 0.15-μm Γ-Shaped Gate In0.52Al0.48As/In0.6Ga0.4As Metamorphic HEMTs Using DUV Lithography and Tilt Dry-Etching Technique
Author :
Lien, Yi-Chung ; Chen, Szu-Hung ; Chang, Edward Yi ; Lee, Ching-Ting ; Chu, Li-Hsin ; Chang, Chia-Yuan
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
An In0.52Al0.48As/In0.6Ga0.4 As metamorphic high-electron mobility transistor (MHEMT) with 0.15-mum Gamma-shaped gate using deep ultraviolet lithography and tilt dry-etching technique is demonstrated. The developed submicrometer gate technology is simple and of low cost as compared to the conventional E-beam lithography or other hybrid techniques. The gate length is controllable by adjusting the tilt angle during the dry-etching process. The fabricated 0.15-mum In0.52Al0.48As/In0.6Ga0.4As MHEMT using this novel technique shows a saturated drain-source current of 680 mA/mm and a transconductance of 728 mS/mm. The fT and fmax of the MHEMT are 130 and 180 GHz, respectively. The developed technique is a promising low-cost alternative to the conventional submicrometer E-beam gate technology used for the fabrication for GaAs MHEMTs and monolithic microwave integrated circuits
Keywords :
III-V semiconductors; MMIC; etching; gallium compounds; high electron mobility transistors; indium compounds; ultraviolet lithography; wide band gap semiconductors; 0.15 micron; 130 GHz; 180 GHz; DUV lithography; Gamma-shaped gate; In0.52Al0.48As-In0.6Ga0.4 As; Metamorphic HEMTs; deep ultraviolet lithography; high-electron mobility transistor; monolithic microwave integrated circuits; submicrometer gate technology; tilt dry-etching; Costs; Fabrication; Gallium arsenide; HEMTs; Integrated circuit technology; Lithography; MODFETs; Microwave technology; Transconductance; mHEMTs; $Gamma$-shaped gate; Deep ultraviolet (DUV) lithography; metamorphic high-electron mobility transistors (MHEMTs); tilt dry-etching technique;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.889049
