DocumentCode :
993571
Title :
A new device architecture suitable for high-resolution and high-performance image sensors
Author :
Hynecek, Jaroslav
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Volume :
35
Issue :
5
fYear :
1988
fDate :
5/1/1988 12:00:00 AM
Firstpage :
646
Lastpage :
652
Abstract :
A device architecture for building high-performance and high-resolution image sensors suitable for consumer TV camera applications is introduced. The sensor elements are junction field-effect transistors that are organized in an array with their gates floating and capacitively coupled to common horizontal address line. The photogenerated signal is sampled one line at a time, processed to remove the element-to-element nonuniformities, and stored in a buffer for subsequent readout. The concept, which includes an intrinsic exposure control, is demonstrated on a test image sensor that has an 8-mm sensing area diagonal and 580 (H)×488 (V) pixels. The key performance parameters, in addition to a high packing density of sensing elements with a unique hexagonal shape, include high signal uniformity, low dark current, good light sensitivity, high blooming overload protection, and no image smear. The discussion covers the design and operation of the basic image-sensing element, the architecture of the array, and the operation of the on-chip circuits needed for addressing and processing of generated signals. The overall device performance is demonstrated by typical device characterization results
Keywords :
field effect integrated circuits; image sensors; junction gate field effect transistors; 283040 pixel; 488 pixel; 580 pixel; FGA image sensor; blooming overload protection; consumer TV camera applications; device architecture; floating gate array; high packing density; high-performance image sensors; high-resolution image sensors; horizontal address line; intrinsic exposure control; junction field-effect transistors; light sensitivity; low dark current; on-chip circuits; photogenerated signal; signal uniformity; Buffer storage; Buildings; Cameras; Capacitive sensors; FETs; Image sensors; Sensor arrays; Signal processing; TV; Testing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.2508
Filename :
2508
Link To Document :
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