Schottky-Barrier Height Lowering by an Increase of the Substrate Doping in PtSi Schottky Barrier Source/Drain FETs

Author

Lousberg, G.P. ; Yu, H.Y. ; Froment, B. ; Augendre, E. ; De Keersgieter, A. ; Lauwers, A. ; Li, M.-F. ; Absil, P. ; Jurczak, M. ; Biesemans, S.

Author_Institution

IMEC, Leuven

Volume

28

Issue

2

fYear

2007

Firstpage

123

Lastpage

125

Abstract

In this letter, the Schottky-barrier height (SBH) lowering in Pt silicide/n-Si junctions and its implications to Schottky-barrier source/drain p-field-effect transistors (p-SBFETs) are studied experimentally and numerically. We demonstrate that the increase of the n-Si substrate doping is responsible for a larger hole SBH lowering through an image-force mechanism, which leads to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations show that the channel doping concentration is also critical for short-channel p/n-silicon-on-insulator SBFET performance

Keywords

Schottky barriers; Schottky gate field effect transistors; p-n junctions; semiconductor doping; silicon; silicon-on-insulator; PtSi; VCSEL; multiple quantum wells; oxide planarization; single mode operation; spatial mode filtering; surface relief; transverse mode suppression; vertical cavity surface emitting lasers; Annealing; CMOS technology; Doping; Electrons; FETs; MOSFETs; Microelectronics; Schottky barriers; Silicides; Silicon on insulator technology; $hbox{PtSi}_{x}$; Schottky-barrier (SB) lowering; Schottky-barrier source/drain field-effect transistors (SBFETs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.889045

Filename

4068957