Title :
High-temperature aging tests on planar structure InGaAs/InP PIN photodiodes with Ti/Pt and Ti/Au contact
Author :
Ishihara, H. ; Makita, Kikuo ; Sugimoto, Yoshiki ; Torikai, T. ; Taguchi, Katsuhisa
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Planar structure InGaAs/InP PIN photodiodes having low dark current and low junction capacitance characteristics were reproducibly fabricated by using VPE wafers. Bias/temperature life testings for the diodes showed that there were no significant degradations after 5500 h aging at 250°C and 10 V reverse bias by adopting the Ti/Pt and Ti/Au metals for the p-side contact.
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; life testing; photodiodes; vapour phase epitaxial growth; III-V semiconductors; InGaAs/InP PIN photodiodes; Ti/Au contact; Ti/Pt contact; VPE; aging; dark current; junction capacitance characteristics; life testings; p-side contact; planar structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840448
