Title :
Short-Channel Effects in Independent-Gate FinFETs
Author :
Lu, Zhichao ; Fossum, Jerry G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL
Abstract :
A physics-based model is used to examine short-channel effects (SCEs) in undoped nanoscale independent-gate FinFETs, e.g., the MIGFET (L. Mathew, , Proc. IEEE Internat. SOI Conf., p. 187, 2004). Predicted current-voltage characteristics of MIGFETs in the single-gate mode show that the SCEs (threshold-voltage rolloff, subthreshold-swing degradation, and drain-induced barrier lowering) are actually less severe than those of the device in the double-gate mode. Insightful explanations of the results are given
Keywords :
MOSFET; radiation hardening (electronics); FinFET; MIGFET; barrier lowering; double-gate MOSFET; short-channel effects; subthreshold-swing degradation; threshold-voltage rolloff; Degradation; FinFETs; Helium; Intrusion detection; MOSFET circuits; Nanoscale devices; Numerical simulation; Poisson equations; Quantization; Threshold voltage; Double-gate (DG) MOSFET; MIGFET;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.889236
