DocumentCode :
993598
Title :
The Effects of the Injection-Channel Velocity on the Gate Leakage Current of Nanoscale MOSFETs
Author :
Mao, Lingfeng
Author_Institution :
Sch. of Electron. & Inf. Eng, Soochow Univ., Suzhou
Volume :
28
Issue :
2
fYear :
2007
Firstpage :
161
Lastpage :
163
Abstract :
A model is established to describe how the injection-channel electron velocity of nanometer MOSFETs affects the gate leakage current in the regime of diffusive to ballistic transition. The results show that the coupling between the transverse and the longitudinal components of electron motion largely affects the gate leakage current when the electron velocity is higher than the thermal injection velocity (1times107 cm/s). It suggests that due to the ballistic transport, the coupling effect should be considered for the gate leakage current of nanoscale MOSFETs, if the channel electrons reach a higher velocity
Keywords :
MOSFET; ballistic transport; electron mobility; leakage currents; nanoelectronics; semiconductor device models; tunnelling; ballistic transport; coupling effect; diffusive transition; electron motion; gate leakage current; injection-channel electron velocity; nanoscale MOSFET; thermal injection velocity; tunneling current; Ballistic transport; Electrons; Leakage current; MOSFETs; Particle scattering; Potential energy; Quantum wells; Resonant tunneling devices; Schrodinger equation; Voltage; Dielectric films; MOSFETs; tunneling;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.889214
Filename :
4068959
Link To Document :
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