DocumentCode :
993646
Title :
Physical Modeling of Temperature Coefficient of Resistance for Single- and Multi-Wall Carbon Nanotube Interconnects
Author :
Naeemi, Azad ; Meindl, James D.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA
Volume :
28
Issue :
2
fYear :
2007
Firstpage :
135
Lastpage :
138
Abstract :
Equivalent circuit models are presented for the resistance of single- and multi-wall carbon nanotubes (MWCNs) that capture various electron-phonon scattering mechanisms as well as changes in the number of conduction channels as a function of temperature. For single- and few-wall nanotubes, the temperature coefficient of resistance (TCR) is always positive and increases with length. It reaches 1/(T-200 K) for lengths much larger than the electron mean free path, where T is the temperature in kelvin. For MWCNs with large diameters (>20 nm), TCR varies from -1/T to +0.66/(T-200 K) as the length varies from zero to very large values
Keywords :
carbon nanotubes; electric resistance; electrical conductivity; equivalent circuits; integrated circuit interconnections; semiconductor quantum wires; electron phonon scattering; equivalent circuit models; molecular electronics; multi wall carbon nanotube interconnects; physical modeling; quantum wires; single wall carbon nanotube interconnects; temperature coefficient of resistance; Acoustic scattering; Carbon nanotubes; Copper; Electrons; Integrated circuit interconnections; Kelvin; Particle scattering; Temperature; Thermal conductivity; Wires; Conductivity; interconnections; modeling; molecular electronics; quantum wires; temperature;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.889240
Filename :
4068963
Link To Document :
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