1-μm Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm

Author

Rajagopalan, K. ; Droopad, R. ; Abrokwah, J. ; Zurcher, P. ; Fejes, P. ; Passlack, M.

Author_Institution

Freescale Semicond. Inc, Tempe, AZ

Volume

28

Issue

2

fYear

2007

Firstpage

100

Lastpage

102

Abstract

In this letter, 1-mum GaAs-based enhancement-mode n-channel devices with channel mobility of 5500 cm²/Vmiddots and g _m exceeding 250 mS/mm have been fabricated. The measured device parameters including threshold voltage V_th, maximum extrinsic transconductance g_m, saturation current I_dss, on-resistance R_on, and gate current are 0.11 V, 254 mS/mm, 380 mA/mm, 4.5 Omegamiddotmm, and < 56 pA for a first wafer and 0.08 V, 229 mS/mm, 443 mA/mm, 4.5 Omegamiddotmm, and < 90 pA for a second wafer, respectively. With an intrinsic transconductance g_mi of 434 mS/mm, GaAs enhancement-mode MOSFETs have reached expected intrinsic device performance

Keywords

III-V semiconductors; MOSFET; gallium compounds; wide band gap semiconductors; 0.08 V; 0.11 V; 1 micron; GaAs; compound semiconductor; enhancement mode MOSFET; n-Channel MOSFET; Buffer layers; Electron mobility; Gallium arsenide; Indium phosphide; MOSFETs; Manufacturing; Substrates; Superlattices; Threshold voltage; Transconductance; Compound semiconductor; GaAs; MOSFETs; enhancement mode; high-mobility channel;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.889502

Filename

4068967