Title :
Injected Current and Quantum Transmission Coefficient in Low Schottky Barriers: WKB and Airy Approaches
Author :
Rengel, Raul ; Pascual, Elena ; Martin, Maria J.
Author_Institution :
Dept. de Fisica Aplicada, Salamanca Univ.
Abstract :
An exact solution of the quantum transmission coefficient has been obtained by using an Airy-transfer-matrix formalism to solve Schroumldinger equation. The procedure is applied to the calculation of the transmission coefficient in reverse-biased low Schottky diodes. The barrier profiles are given by Monte Carlo device simulations. As compared to the exact calculation, results indicate that injected current is much exacerbated when considering Wentzel-Kramers-Brillouin (WKB) approach or when neglecting quantum mechanical reflections for energies over the potential barrier. However, WKB could reasonably predict the total current if properly modifying the model parameters. Influence of barrier lowering is also discussed
Keywords :
Monte Carlo methods; Schottky barriers; Schottky diodes; Schrodinger equation; semiconductor device models; Airy transfer matrix; Monte Carlo device simulations; Schottky barriers; Schottky diodes; Schrodinger equation; Wentzel-Kramers-Brillouin approach; injected current coefficient; potential barrier; quantum mechanical reflections; quantum transmission coefficient; semiconductor device modeling; MOSFETs; Monte Carlo methods; Quantum mechanics; Reflection; Schottky barriers; Schottky diodes; Schrodinger equation; Silicon; Turning; Wave functions; Airy functions; Schottky barriers (SBs); Wentzel–Kramers–Brillouin (WKB) approach; metallic source/drain; quantum transmission coefficient; semiconductor device modeling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.889511
