DocumentCode :
993717
Title :
Electrically Bistable Thin-Film Device Based on PVK and GNPs Polymer Material
Author :
Song, Y. ; Ling, Q.D. ; Lim, S.L. ; Teo, E.Y.H. ; Tan, Y.P. ; Li, L. ; Kang, E.T. ; Chan, D.S.H. ; Zhu, Chunxiang
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore
Volume :
28
Issue :
2
fYear :
2007
Firstpage :
107
Lastpage :
110
Abstract :
We present an electrical-bistability device based on MIM-sandwiched structure. Poly(N-vinylcarbazole) (PVK) mixed with gold nanoparticles (GNPs) serve as the active layer between two metal electrodes. After applying a voltage, the as-fabricated device can transit from low conductivity state to high conductivity state. By simply using a reverse bias, the high conductivity state can return to the low conductivity state. An on/off current ratio as high as 105 at room temperature has been achieved. The memory effect is attributed to electric-field-induced charge transfer complex formed between the PVK and the GNPs. The device shows a good stability under stress test for both states and exhibits a high potential on Flash-type memory applications
Keywords :
MIM devices; circuit bistability; flash memories; gold; nanoparticles; polymers; random-access storage; sandwich structures; thin film circuits; GNP; MIM sandwiched structure; ON/OFF current ratio; PVK; charge transfer complex; electrical bistability; flash type memory applications; gold nanoparticles; memory effect; poly(N-vinylcarbazole); stress test; thin film device; Charge transfer; Conducting materials; Conductivity; Electrodes; Gold; Nanoparticles; Polymer films; Temperature; Thin film devices; Voltage; Electrical bistability; gold nanoparticle (GNP); memory effect; poly(N-vinylcarbazole) (PVK); thin-film device;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.889519
Filename :
4068970
Link To Document :
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