Title :
A Novel Dilute Antimony Channel In0.2Ga0.8AsSb/GaAs HEMT
Author :
Su, Ke-Hua ; Hsu, Wei-Chou ; Lee, Ching-Sung ; Wu, Tsung-Yeh ; Wu, Yue-Han ; Li Chang ; Hsiao, Ru-Shang ; Chen, Jenn-Fang ; Chi, Tung-Wei
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Abstract :
This letter reports, for the first time, a high-electron mobility transistor (HEMT) using a dilute antimony In0.2Ga0.8 AsSb channel, which is grown by a molecular-beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the HEMT device was effectively improved by introducing the surfactantlike Sb atoms during the growth of the InGaAs layer. The improved heterostructural quality and electron transport properties have also been verified by various surface characterization techniques. In comparison, the proposed HEMT with (without) the incorporation of Sb atoms has demonstrated the maximum extrinsic transconductance gm,max of 227 (180) mS/mm, a drain saturation current density IDSS of 218 (170) mA/mm, a gate-voltage swing of 1.215 (1.15) V, a cutoff frequency fT of 25 (20.6) GHz, and the maximum oscillation frequency fmax of 28.3 (25.6) GHz at 300 K with gate dimensions of 1.2times200 mum2
Keywords :
III-V semiconductors; electron transport theory; gallium compounds; high electron mobility transistors; indium compounds; wide band gap semiconductors; 25 GHz; 28.3 GHz; 300 K; HEMT; In0.2Ga0.8AsSb-GaAs; dilute channel; high-electron mobility transistor; molecular-beam epitaxy; quantum well; surface characterization; Atomic layer deposition; Current density; Cutoff frequency; Electrons; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Molecular beam epitaxial growth; Transconductance; Dilute channel; InGaAsSb/GaAs high-electron mobility transistor (HEMT); surfactant;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.889047
