Title :
Predicting Thermal Neutron-Induced Soft Errors in Static Memories Using TCAD and Physics-Based Monte Carlo Simulation Tools
Author :
Warren, Kevin M. ; Sierawski, Brian D. ; Weller, Robert A. ; Reed, Robert A. ; Mendenhall, Marcus H. ; Pellish, Jonathan A. ; Schrimpf, Ron D. ; Massengill, Lloyd W. ; Porter, Mark E. ; Wilkinson, Jeffrey D.
Author_Institution :
Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN
Abstract :
A combination of commercial simulation tools and custom applications utilizing Geant4 physics libraries is used to analyze thermal neutron induced soft error rates in a commercial bulk CMOS SRAM. Detailed descriptions of the sensitive regions based upon technology in computer-aided design calibration are used in conjunction with a physics-based Monte Carlo simulator to predict neutron soft error cross sections that are in good agreement with experimental results
Keywords :
CMOS integrated circuits; Monte Carlo methods; circuit CAD; neutron effects; random-access storage; CMOS SRAM; Geant4 Physics libraries; Monte Carlo simulation tools; TCAD; computer-aided design calibration; thermal neutron-induced soft errors; Analytical models; Application software; CMOS technology; Computational modeling; Design automation; Error analysis; Libraries; Neutrons; Physics; Random access memory; Environmental radiation effects; integrated circuit radiation effects; integrated circuit reliability; neutron radiation effects;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.889632
