Title :
Monolithically integrated array of GaAlAs electroabsorption modulators
Author :
Robinson, D.L. ; Marshall, W.K. ; Katz, Justin ; Smith, Jeffrey S. ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Jet Propulsion Laboratory, Pasadena, USA
Abstract :
The operation of an eight-element monolithic array of GaAlAs electroabsorption modulators has been demonstrated. The single-mode waveguide modulators are implemented in a reverse-biased p-¿-n heterojunction configuration, with centre-to-centre spacing of 9 ¿m between adjacent channels. This device may be useful for intensity modulation in high (spatial) resolution applications.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; integrated optics; optical modulation; p-n heterojunctions; Franz-Keldysh effect; GaAlAs electroabsorption modulators; III-V semiconductors; centre-to-centre spacing; eight-element monolithic array; high spatial resolution; intensity modulation; p-pi-n heterojunctions; single-mode waveguide modulators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840465
