Title :
Electrical Properties of nMOSFETs Using the NiSi:Yb FUSI Electrode
Author :
Yu, H.Y. ; Lauwers, A. ; Demeurisse, C. ; Richard, O. ; Mertens, S. ; Opsomer, K. ; Singanamalla, R. ; Rosseel, E. ; Absil, P. ; Biesemans, S.
Author_Institution :
Interuniv. Microelectron. Center, Leuven
Abstract :
In this letter, nMOSFETs using a NiSi:Yb fully silicide (FUSI) electrode are demonstrated for the first time. We report that the integration of NiSi:Yb FUSI into our reference n-FETs with the respective SiON / HfSiON gate dielectrics results in a Vt reduction from 0.55/0.52 down to 0.30/0.43 V, without degradation of the gate dielectric integrity, channel interface states, and long channel device mobility
Keywords :
MOSFET; electrodes; hafnium compounds; nickel compounds; silicon compounds; 0.30 to 0.55 V; NiSi:Yb; SiON-HfSiON; channel interface states; gate dielectric integrity; long channel devices mobility; nMOSFET; Degradation; Dielectric devices; Dielectric materials; Dielectric measurements; Electrodes; Inorganic materials; Interface states; MOSFETs; Metals industry; Silicides; Fully silicide (FUSI); NiSi:Yb; nMOSFETs;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.889259
