Passivation Effects of Aluminum on Polycrystalline Silicon Thin-Film Transistor With Metal-Replaced Junctions

Author

Zhang, Dongli ; Wong, Man

Author_Institution

Dept. of Electron. & Comput. Eng, Hong Kong Univ. of Sci. & Technol., Kowloon

Volume

28

Issue

2

fYear

2007

Firstpage

126

Lastpage

128

Abstract

Aluminum was detected in the channel of a thin-film transistor after its replacement of the polycrystalline silicon source and drain junctions. The resulting transistor exhibits enhanced field-effect mobility, steeper slope of the pseudosubthreshold region, reduced turn-on voltage extrapolated from the linear regime of operation, higher on-state current, and improved immunity against short-channel effects. These improvements are consistent with a measured reduction in the density of trap states. The reduction can be attributed to the presence of aluminum in the channel

Keywords

aluminium; electron mobility; passivation; semiconductor junctions; silicon; thin film transistors; Al; Si; drain junction; field effect mobility; metal replaced junctions; passivation effects; polycrystalline silicon; pseudosubthreshold region; short channel effects; source junction; steeper slope; thin film transistor; trap states density; Aluminum; Contact resistance; Density measurement; Dielectric substrates; FETs; Nitrogen; Passivation; Silicon; Thin film transistors; Voltage; Aluminum; passivation; polycrystalline silicon; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.889506

Filename

4068976