Title :
Epitaxial n-channel JFETs integrated on high resistivity silicon for X-ray detectors
Author :
Lund, J.C. ; Olschner, F. ; Bennett, P. ; Rehn, L.
Author_Institution :
Radiatian Monitoring Devices Inc., Watertown, MA, USA
fDate :
8/1/1995 12:00:00 AM
Abstract :
Junction field-effect transistors (JFETs) were fabricated directly onto a high resistivity silicon wafer and tested as readout devices for radiation detectors. The JFETs were fabricated using an n-channel epitaxial process. We report on the design and electrical characteristics of these devices as well as the noise performance and energy resolution obtained with these devices when operated as X-ray spectrometers
Keywords :
JFET integrated circuits; X-ray detection; X-ray spectrometers; detector circuits; field effect analogue integrated circuits; nuclear electronics; semiconductor device noise; semiconductor epitaxial layers; silicon radiation detectors; Si; X-ray detectors; X-ray spectrometers; design characteristics; electrical characteristics; energy resolution; epitaxial n-channel JFETs integration; high resistivity Si; junction field-effect transistors; noise performance; radiation detectors; readout devices; Capacitance; Conductivity; Implants; JFETs; MOSFETs; Preamplifiers; Silicon; Substrates; Temperature; X-ray detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
