Title :
On the Control of Short-Channel Effect for MOSFETs With Reverse Halo Implantation
Author :
Zhu, Huilong ; Zhong, Huicai ; Kawamura, Takahiro ; Liang, Qingqing ; Leobandung, Effendi ; Huang, Shih-Fen
Author_Institution :
Microelectron. Div., IBM Semicond. Res. & Dev. Center, NY
Abstract :
Reverse halo implantation (RHI), for the first time, is introduced and used to fabricate MOSFETs. It was demonstrated that RHI can dramatically improve short-channel effect, which can be used to enhance MOSFET performance, improve process control, or reduce stand-by power consumption. Implantation damage of RHI to gate oxide is negligible. The method of RHI is economic and suitable for massive manufacturing of very large scale integration
Keywords :
MOSFET; VLSI; ion implantation; MOSFET; halo ion implantation; power consumption; process control; reverse halo implantation; short-channel effect; very large scale integration; Boron; Energy consumption; Implants; Indium; Integrated circuit noise; Ion implantation; MOSFET circuits; Manufacturing; Process control; Very large scale integration; on–off control; CMOSFETs; Circuit noise; MOSFETs; ion implantation; power demand; process control; very large scale integration (VLSI);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.889230
