DocumentCode
993782
Title
On the Control of Short-Channel Effect for MOSFETs With Reverse Halo Implantation
Author
Zhu, Huilong ; Zhong, Huicai ; Kawamura, Takahiro ; Liang, Qingqing ; Leobandung, Effendi ; Huang, Shih-Fen
Author_Institution
Microelectron. Div., IBM Semicond. Res. & Dev. Center, NY
Volume
28
Issue
2
fYear
2007
Firstpage
168
Lastpage
170
Abstract
Reverse halo implantation (RHI), for the first time, is introduced and used to fabricate MOSFETs. It was demonstrated that RHI can dramatically improve short-channel effect, which can be used to enhance MOSFET performance, improve process control, or reduce stand-by power consumption. Implantation damage of RHI to gate oxide is negligible. The method of RHI is economic and suitable for massive manufacturing of very large scale integration
Keywords
MOSFET; VLSI; ion implantation; MOSFET; halo ion implantation; power consumption; process control; reverse halo implantation; short-channel effect; very large scale integration; Boron; Energy consumption; Implants; Indium; Integrated circuit noise; Ion implantation; MOSFET circuits; Manufacturing; Process control; Very large scale integration; on –off control; CMOSFETs; Circuit noise; MOSFETs; ion implantation; power demand; process control; very large scale integration (VLSI);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.889230
Filename
4068977
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