Title :
Microwave noise in AlGaN/GaN channels
Author :
Matulionis, A. ; Liberis, J.
Author_Institution :
Semicond. Phys. Inst., Vilnius, Lithuania
fDate :
4/12/2004 12:00:00 AM
Abstract :
Recent investigation of microwave noise of nominally undoped AlGaN/GaN channels is reviewed. The noise is agitated in a two-dimensional electron gas by an electric field applied in the plane of electron confinement. The experimental results are compared with those of Monte Carlo simulation and with simple semi-empirical formulas. The importance of hot-phonon effects is emphasised.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave devices; semiconductor device noise; two-dimensional electron gas; 2D electron gas; AlGaN-GaN; Monte Carlo simulation; electric fields; electron confinement; hot-phonon effects; microwave noise; nominally undoped AlGaN/GaN channels;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20040199
