Title :
High-speed optoelectronic sampling with semiconductor-laser pulsed coplanar photoconductor
Author :
Schmid, P. ; Melchior, H.
Author_Institution :
Swiss Federal Institute of Technology, Institute of Applied Physics, Zurich, Switzerland
Abstract :
A semiconductor-laser strobed photoconductive sampling gate for the measurement of ultra-high-speed electronic signals on coaxial lines is reported. For the short response (<100 ps) and high responsivity (>0.1 A/W) at the 830 nm laser wavelength the sampling gate uses a miniaturised (8×8×1 ¿m) epitaxial GaAs photoconductor on a broadband tapered coplanar 50 ¿ microwave structure.
Keywords :
III-V semiconductors; gallium arsenide; measurement by laser beam; microwave measurement; photoconducting devices; semiconductor junction lasers; semiconductor switches; GaAs photoconductor; III-V semiconductors; broadband; coaxial lines; coplanar 50 ohm microwave structure; laser wavelength 830 nm; optoelectronic sampling; responsivity; respose time 100 ps; semiconductor-laser pulsed coplanar photoconductor; semiconductor-laser strobed photoconductive sampling gate; ultra high speed electronic signals measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840469
