Title :
The magnetotransistor effect
Author :
Andreou, A.G. ; Westgate, Charles R.
Author_Institution :
Johns Hopkins University, Department of Electrical Engineering & Computer Science, Baltimore, USA
Abstract :
A new physical mechanism, active in the base region of dual-collector lateral bipolar tranistors in the presence of a transverse magnetic field, is described in the letter. This mechanism induces a differential current flow from the two collectors, and is also responsible for an increase in the overall current gain.
Keywords :
bipolar transistors; magnetoelectric effects; semiconductor device models; base region; differential current flow; dual-collector lateral bipolar transistors; magnetotransistor effect; new physical mechanism; overall current gain increase; transverse magnetic field;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840480
