DocumentCode
993925
Title
Angular Dependence of Magnetoresistance During Magnetization Reversal on Magnetic Tunnel Junction Ring
Author
Chen, C.C. ; Chang, C.C. ; Chang, Y.C. ; Chao, C.T. ; Kuo, C.Y. ; Horng, Lance ; Wu, J.C. ; Wu, Teho ; Chern, G. ; Huang, C.Y. ; Tsunoda, M. ; Takahashi, M.
Author_Institution
Taiwan SPIN Res. Center, Nat. Changhua Univ. of Educ.
Volume
43
Issue
2
fYear
2007
Firstpage
920
Lastpage
922
Abstract
Microstructured magnetic tunnel junction ring with outer/inner diameter of 2/1 mum has been fabricated to investigate the angular dependence of magnetoresistance during magnetization reversal process. The minor loop of magnetoresistive curve reveals four distinct resistance levels associated with four magnetization configurations within the free layer throughout the magnetization reversal. The magnetoresistance decreases with increasing angle between applied external field and biasing direction, which is resulted from the relative alignment of total magnetization of pinned and free layer. An extra feature appeared in the minor loop when the external field is transverse to the biasing direction; this can be attributed to a vortex-pair formation/annihilation in the free layer. Furthermore, a series of schemes of magnetic configurations of pinned and free layers are illustrated to explain the routes of minor loops
Keywords
Permalloy; aluminium compounds; copper; copper alloys; iridium alloys; magnetic multilayers; magnetic thin films; magnetisation reversal; manganese alloys; metallic thin films; tantalum; tunnelling magnetoresistance; 1 mum; 2 mum; Si-SiO2; Ta-Cu-NiFe-MnIr-CoFe-AlN; angular dependence; biasing direction; free layer; magnetization configurations; magnetization reversal; magnetoresistance; microstructured magnetic tunnel junction ring; minor magnetoresistive curve loop; pinned layer; relative total magnetization alignment; resistance levels; transverse applied external field; vortex-pair annihilation; vortex-pair formation; Chaos; Fabrication; Giant magnetoresistance; Lithography; Magnetic devices; Magnetic field measurement; Magnetic tunneling; Magnetization reversal; Magnetoresistive devices; Tunneling magnetoresistance; Magnetization reversal; magnetoresistance; magnetoresistive devices;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2006.888511
Filename
4068991
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