• DocumentCode
    993925
  • Title

    Angular Dependence of Magnetoresistance During Magnetization Reversal on Magnetic Tunnel Junction Ring

  • Author

    Chen, C.C. ; Chang, C.C. ; Chang, Y.C. ; Chao, C.T. ; Kuo, C.Y. ; Horng, Lance ; Wu, J.C. ; Wu, Teho ; Chern, G. ; Huang, C.Y. ; Tsunoda, M. ; Takahashi, M.

  • Author_Institution
    Taiwan SPIN Res. Center, Nat. Changhua Univ. of Educ.
  • Volume
    43
  • Issue
    2
  • fYear
    2007
  • Firstpage
    920
  • Lastpage
    922
  • Abstract
    Microstructured magnetic tunnel junction ring with outer/inner diameter of 2/1 mum has been fabricated to investigate the angular dependence of magnetoresistance during magnetization reversal process. The minor loop of magnetoresistive curve reveals four distinct resistance levels associated with four magnetization configurations within the free layer throughout the magnetization reversal. The magnetoresistance decreases with increasing angle between applied external field and biasing direction, which is resulted from the relative alignment of total magnetization of pinned and free layer. An extra feature appeared in the minor loop when the external field is transverse to the biasing direction; this can be attributed to a vortex-pair formation/annihilation in the free layer. Furthermore, a series of schemes of magnetic configurations of pinned and free layers are illustrated to explain the routes of minor loops
  • Keywords
    Permalloy; aluminium compounds; copper; copper alloys; iridium alloys; magnetic multilayers; magnetic thin films; magnetisation reversal; manganese alloys; metallic thin films; tantalum; tunnelling magnetoresistance; 1 mum; 2 mum; Si-SiO2; Ta-Cu-NiFe-MnIr-CoFe-AlN; angular dependence; biasing direction; free layer; magnetization configurations; magnetization reversal; magnetoresistance; microstructured magnetic tunnel junction ring; minor magnetoresistive curve loop; pinned layer; relative total magnetization alignment; resistance levels; transverse applied external field; vortex-pair annihilation; vortex-pair formation; Chaos; Fabrication; Giant magnetoresistance; Lithography; Magnetic devices; Magnetic field measurement; Magnetic tunneling; Magnetization reversal; Magnetoresistive devices; Tunneling magnetoresistance; Magnetization reversal; magnetoresistance; magnetoresistive devices;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2006.888511
  • Filename
    4068991