Characteristics of Ga–Sb–Te Films for Phase-Change Memory

Novel materials based on the Ga-Sb-Te system are proposed as a medium for phase-change memory (PCM). Studied compositions were located along the pseudo-binary tie-line GaSb-Sb₈Te₂, in which the atomic ratio Sb/Te of GaSbTe films is higher by incorporating GaSb into Sb₈Te₂, indicating a possible higher crystallization speed hereof. The GaSbTe films were explored by systematic evaluations of crystallinity, crystallization, and melting temperatures (T_x, T_m), resistivity at crystalline and amorphous states (R_c, R_a), R_a/R_c ratio and temperature-dependent electrical resistivity for PCM. The Ga₃ Sb₈Te₁ composition, exhibiting single endothermic peak, lower T_m, higher T_x/T_m and R_a/R_c ratios, suitable T_x, and electrical resistivity at crystalline state, is highly potential for PCM to reduce the reset current