A novel amplified image sensor with a-Si:H photoconductor and MOS transistors

Author

Huang, Zhong-Shou ; Ando, Takao

Author_Institution

Shizuoka Univ., Hamamatsu, Japan

Volume

37

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

1432

Lastpage

1438

Abstract

An image sensor and a 16×16 pixel test device consisting of a MOS transistor array overlaid with an a-Si:H photoconductive film are presented. The sensor operates by applying the potential induced on the surface of a a-Si:H film directly to the gates of the MOS transistors, and then reading out the modulated drain currents. Photosensitivity is 4-5.6 μA/(nJ/cm²) for incident light of λ=0.6 μm, dynamic range is over 85 dB, and γ≃1. The sensor can be constructed in four configurations, depending on whether the carriers of image information in the a-Si:H film or MOS transistor channel are electrons or holes. The properties of signal and gain for the sensors of low and high pixel density, respectively, are analyzed, and it is pointed out that two distinct amplifying effects can exist in the sensor simultaneously

Keywords

MOS integrated circuits; amorphous semiconductors; amplifiers; elemental semiconductors; image sensors; photoconducting devices; silicon; 0.6 micron; 16 pixel; 256 pixel; MOS transistor array; MOS transistors; amorphous Si:H photoconductor; amplified image sensor; amplifying effects; configurations; dynamic range; gain; high pixel density; photosensitivity; stacked structure; Charge carrier processes; Dynamic range; Image sensors; MOSFETs; Photoconducting devices; Photoconductivity; Pixel; Sensor arrays; Signal analysis; Testing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.106237

Filename

106237