Title :
Ion-beam-deposited films for refractory-metal tunnel junctions
Author :
Ruggiero, S.T. ; Face, D.W. ; Prober, D.E.
Author_Institution :
Yale University, New Haven, CT
fDate :
5/1/1983 12:00:00 AM
Abstract :
We report on the application of a Kaufman ion source to the deposition of Nb and Ta thin films. We find that high quality Nb films (Tc= 9.1 K) can be produced by this technique under tolerant deposition conditions. In addition, substantial, systematic improvement in the I-V characteristics of Nb tunnel junctions has been realized by depositing, in situ, thin (≥10Å) Ta layers on the Nb film surface.
Keywords :
Ion radiation effects; Niobium materials/devices; Tunnel effect; Copper; Ion sources; Josephson junctions; Niobium; Optical films; Physics; Sputtering; Substrates; Superconducting epitaxial layers; Superconducting films;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1983.1062371
