Title :
Picosecond optoelectronic switching in semiconductors using a partly covered gap
Author :
Br¿¿ckner, V. ; Kerstan, F.
Author_Institution :
Friedrich-Schiller University, Department of Physics, Jena, East Germany
Abstract :
The generation of picosecond electric pulses with high-voltage transmission by an optoelectronic switch with a partly covered gap and its application to time-resolved photoconductivity measurements in an ion-beam damaged SOS sample at different excitation wavelengths is reported.
Keywords :
electrical conductivity measurement; optoelectronic devices; photoconductivity; pulse generators; semiconductor device testing; semiconductor switches; semiconductor-insulator boundaries; high-voltage transmission; ion-beam damaged SOS sample; optoelectronic switch; partly covered gap; picosecond electric pulses; relaxation studies; semiconductor-insulator boundaries; semiconductors; time-resolved photoconductivity measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840505
