Title :
High temperature CW operation of p-substrate buried crescent laser diode emitting at 1.3 μm
Author :
Sakakibara, Y. ; Oomura, E. ; Higuchi, H. ; Namizaki, H. ; Ikeda, Ken-ichi ; Susaki, W.
Author_Institution :
Mitsubishi Electric Corporation, LSI Research & Development Laboratory, Itami, Japan
Abstract :
A 1.3 μm InGaAsP/InP buried crescent laser diode has been fabricated on p-InP substrate. The laser diode has a low threshold current, as low as 10 mA. It operates at the output power of 5 mW under CW condition at temperatures higher nary aging test at 70°C with a constant light output of 5 mW, the lasers have been operating stably for more than 1000 h.
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; life testing; optical communication equipment; semiconductor junction lasers; III-V semiconductors; InGaAsP/InP buried crescent laser diode; aging test at 70°C; constant light output; high temperature CW operation; life testing; output power; p-InP substrate; semiconductor lasers; threshold current; wavelength 1.3 micron;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840518
