Title :
Transistor effect in monolithic Si/CoSi2/Si epitaxial structures
Author :
Rosencher, E. ; Delage, S. ; Campidelli, Y. ; Arnaud D´Avitaya, F.
Author_Institution :
CNET-CNS, Meylan, France
Abstract :
Epitaxial Si ¿111¿/CoSi2/Si structures have been grown by molecular beam epitaxy. The transistor effect, via ballistic electron transport in the CoSi2 200 Å-thick base, has been observed. The ballistic mean free path in CoSi2 obtained (¿B ¿ 105 Å) from the current gain is consistent within 20% with the predicted value (¿Bth ¿ 80 Å).
Keywords :
cobalt compounds; elemental semiconductors; molecular beam epitaxial growth; p-n heterojunctions; semiconductor-metal boundaries; silicon; transistors; CoSi2 200 angstroms-thick base; MBE; SMS structures; Si¿111¿/CoSi2/Si structures; ballistic electron transport; ballistic mean free path; current gain; molecular beam epitaxy; monocrystalline structure; monolithic Si/CoSi2/Si epitaxial structures; p-n heterojunctions; semiconductor metal semiconductor structure; transistor effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840519
