Title :
The effect of bi- and trivalent cation impurities on the luminescence of CsI
Author :
Gektin, A.V. ; Krasovitskaya, I.M. ; Shiran, N.V. ; Shlyahturov, V.V. ; Vinograd, E.L.
Author_Institution :
Inst. for Single Crystals, Kharkov, Ukraine
fDate :
8/1/1995 12:00:00 AM
Abstract :
The effect of states of bi- (Ca) and trivalent (Sb, Bi) impurities on the optical and scintillation characteristics of CsI crystals is studied. The variation of point defect states (quenching, deformation, impurity concentration, diffusional activation) changes the correlation between different components of luminescence. The analysis of the obtained results leads to a conclusion about the role of cation vacancy type defects for the localization of the exciton in CsI crystals
Keywords :
antimony; bismuth; caesium compounds; calcium; defect states; excitons; impurity states; localised states; photoluminescence; point defects; radiation quenching; scintillation; solid scintillation detectors; vacancies (crystal); CsI:Ca; CsI:Sb,Bi; bivalent cation impurities; crystals; deformation; diffusional activation; exciton localization; impurity concentration; optical characteristics; photoluminescence; point defect states; quenching; scintillation characteristics; trivalent cation impurities; vacancy type defects; Absorption; Bismuth; Cooling; Crystals; Excitons; Impurities; Luminescence; Photoluminescence; Plastics; Stimulated emission;
Journal_Title :
Nuclear Science, IEEE Transactions on
