• DocumentCode
    994352
  • Title

    InP/InGaAsP p-type substrate and mass transported doubly buried heterostructure laser

  • Author

    Noguchi, Y. ; Suzuki, Yuya ; Matsuoka, T. ; Nagai, Hiroto

  • Author_Institution
    NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
  • Volume
    20
  • Issue
    19
  • fYear
    1984
  • Firstpage
    769
  • Lastpage
    771
  • Abstract
    A novel InP/InGaAsP buried heterostructure laser diode on p-type InP substrate has been developed. The laser has achieved a threshold current as low as 20 mA DC with high power output of 50 mW under CW operation in the fundamental transverse mode.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; CW operation; III-V semiconductors; InP/InGaAsP buried heterostructure laser diode; fundamental transverse mode; mass transported doubly buried heterostructure laser; optical communication laser diode; p-type InP substrate; power output; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840524
  • Filename
    4249032
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=994352