Title :
InP/InGaAsP p-type substrate and mass transported doubly buried heterostructure laser
Author :
Noguchi, Y. ; Suzuki, Yuya ; Matsuoka, T. ; Nagai, Hiroto
Author_Institution :
NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
Abstract :
A novel InP/InGaAsP buried heterostructure laser diode on p-type InP substrate has been developed. The laser has achieved a threshold current as low as 20 mA DC with high power output of 50 mW under CW operation in the fundamental transverse mode.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; CW operation; III-V semiconductors; InP/InGaAsP buried heterostructure laser diode; fundamental transverse mode; mass transported doubly buried heterostructure laser; optical communication laser diode; p-type InP substrate; power output; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840524
