Spectrometric characteristic improvement of CdTe detectors

Author

Ivanov, V.I. ; Garbusin, V.A. ; Dorogov, P.G. ; Loutchanski, A.E. ; Kondrashov, V.V.

Author_Institution

Baltic Sci. Instrum., RITEC Limited, Riga, Latvia

Volume

42

Issue

4

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

258

Lastpage

262

Abstract

A new pulse shape correction method combined with a pulse shape selection method has been proposed for a CdTe detectors energy resolution improvement and increasing the total absorption peak efficiency. The capabilities of the new technique for the spectrometric characteristic improvement are based on using specific features of the CdTe detectors output pulses. The energy resolution of about 1% FWHM at 662 keV has been achieved with planar CdTe detector under room temperature without decrease of peak efficiency. Standard measurement techniques give 3.7% FWHM. A significant spectrometric characteristic improvement of other room temperature semiconductor detectors such as HgI₂ and CdZnTe detectors was also obtained

Keywords

II-VI semiconductors; cadmium compounds; detector circuits; gamma-ray detection; gamma-ray spectrometers; nuclear electronics; pulse shaping circuits; semiconductor counters; γ-ray spectroscopy detectors; 293 K; 662 keV; CdTe; CdZnTe; HgI₂; energy resolution improvement; output pulses; planar detector; pulse shape correction method; pulse shape selection method; room temperature semiconductor detectors; spectrometric characteristic improvement; total absorption peak efficiency; Absorption; Charge carrier processes; Detectors; Energy resolution; Pulse amplifiers; Pulse measurements; Pulse shaping methods; Shape; Spectroscopy; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.467840

Filename

467840