Electrical characterization and detection performances of various semi-insulating GaAs crystals for low energy gamma-rays

Author

Bertolucci, E. ; Bottigli, U. ; Cola, A. ; Fantacci, M.E. ; Stefanini, A. ; Vasanelli, L.

Author_Institution

Dipartimento di Fisica, Pisa Univ., Italy

Volume

42

Issue

4

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

254

Lastpage

257

Abstract

In order to investigate the correlation between the electrical characteristics of the semi-insulating GaAs and its properties as a possible detector for low energy gamma-rays, we have measured, for various materials, the forward and the reverse I-V characteristic, the capacitance as a function of the frequency at various bias voltages and the capacitance as a function of the bias voltage at various frequencies. To measure the charge collection efficiency, the energy resolution and the detection efficiency as a function of the bias voltage the crystals have been irradiated with 22, 60, 88 and 122 keV photons. The results are discussed and a comparison between materials from various factories, of different thickness and equipped with different contacts is also presented

Keywords

III-V semiconductors; capacitance; gallium arsenide; gamma-ray detection; semiconductor counters; 122 keV; 22 keV; 60 keV; 88 keV; GaAs; GaAs detector; bias voltage; capacitance; charge collection efficiency; contacts; detection efficiency; energy resolution; forward I-V characteristic; frequency; low energy gamma-rays; reverse I-V characteristic; semi-insulating; Capacitance measurement; Electric variables; Electric variables measurement; Energy measurement; Frequency measurement; Gallium arsenide; Gamma ray detection; Gamma ray detectors; Photonic crystals; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.467841

Filename

467841