Charge collection response of SI GaAs p-i-n detectors

Author

Sellin, P.J. ; Buttar, C.M. ; Manolopoulos, S. ; Berwick, K. ; Brozel, M.R. ; Cowperthwaite, M.

Author_Institution

Dept. of Phys., Sheffield Univ., UK

Volume

42

Issue

4

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

247

Lastpage

253

Abstract

The charge collection response of semi insulating GaAs p-i-n detectors to alpha particles has been measured and compared to the results of a simple charge carrier drift model. The model uses an electric field distribution which has been measured using a surface probe technique and assumes that the drift lifetimes are independent of the electric field strength. By comparing the simulated data with the experimentally measured charge collection efficiency, mean drift lifetimes have been deduced of 0.5 ns and 20 ns for the electrons and holes respectively. The model has also been used to simulate the charge collection response of GaAs detectors to gamma rays and to minimum ionising particles

Keywords

alpha-particle detection; gamma-ray detection; semiconductor counters; semiconductor device models; 0.5 to 20 ns; GaAs; GaAs p-i-n detectors; alpha particles; charge carrier drift model; charge collection response; drift lifetimes; electric field distribution; gamma rays; minimum ionising particles; semi insulating; Alpha particles; Charge carriers; Charge measurement; Current measurement; Detectors; Electric variables measurement; Gallium arsenide; Insulation; PIN photodiodes; Particle measurements;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.467842

Filename

467842