Current-Induced Magnetization Switching Probability in MgO-Based Magnetic Tunnel Junctions

Author

Lee, J.M. ; Ye, L.X. ; Weng, M.C. ; Chen, Y.C. ; Su, J.P. ; Wu, Te-Ho

Author_Institution

Graduate Sch. of Eng. Sci. & Technol., Nat. Yunlin Univ. of Sci. & Technol., Touliu

Volume

43

Issue

2

fYear

2007

Firstpage

917

Lastpage

919

Abstract

We report the results of current-induced magnetization switching (CIMS) for MgO-based magnetic tunnel junctions (MTJs) with a tunneling magnetoresistance (TMR) ratio of about 66% and a critical current density of 4.45times10⁶ A/cm². The stable switching probability related to CIMS over 1times10⁴ cycles is observed up to 90%. The influence between the switching current and the pulse duration is discussed

Keywords

boron alloys; cobalt alloys; copper compounds; electric current; iron alloys; magnesium compounds; magnetic multilayers; magnetic switching; magnetic thin films; manganese alloys; metallic thin films; platinum alloys; ruthenium; tantalum; tunnelling magnetoresistance; Ta-CuN-PtMn-CoFe-Ru-CoFeB-MgO; critical current density; current-induced magnetization switching probability; magnetic tunnel junctions; pulse duration; switching current; tunneling magnetoresistance ratio; Computer integrated manufacturing; Current measurement; Magnetic field measurement; Magnetic switching; Magnetic tunneling; Magnetization; Pulse measurements; Temperature measurement; Testing; Tunneling magnetoresistance; Current-induced magnetization switching (CIMS); magnetic tunnel junction (MTJ); switching probability; tunneling magnetoresistance (TMR);

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.888507

Filename

4069042