DocumentCode
994470
Title
Glass reinforced GaAs beam lead Schottky diode with airbridge for millimetre wavelengths
Author
Mills, K. ; Azan, F. ; Perruche, H. ; Boireau, P. ; Lacombe, J.
Author_Institution
Thomson CSF, DHM-DAG, Orsay, France
Volume
20
Issue
19
fYear
1984
Firstpage
787
Lastpage
788
Abstract
We describe the fabrication and measurement of a glass reinforced beam lead Schottky diode with an airbridge for use at millimetre wavelengths. We report an extremely low single sideband (SSB) noise figure for these diodes of 7.9 dB at 94 GHz, including a 1.5 dH IF (30 MHz) contribution.
Keywords
III-V semiconductors; Schottky-barrier diodes; beam-lead devices; electron device noise; gallium arsenide; solid-state microwave devices; EHF; GaAs beam lead Schottky diode; IF 30 MHz; III-V semiconductors; MM-waves; airbridge; fabrication; frequency 94 GHz; glass reinforced beam lead Schottky diode; low SSB noise figure; low single; measurement; millimetre wavelengths;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840536
Filename
4249045
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