Title :
Glass reinforced GaAs beam lead Schottky diode with airbridge for millimetre wavelengths
Author :
Mills, K. ; Azan, F. ; Perruche, H. ; Boireau, P. ; Lacombe, J.
Author_Institution :
Thomson CSF, DHM-DAG, Orsay, France
Abstract :
We describe the fabrication and measurement of a glass reinforced beam lead Schottky diode with an airbridge for use at millimetre wavelengths. We report an extremely low single sideband (SSB) noise figure for these diodes of 7.9 dB at 94 GHz, including a 1.5 dH IF (30 MHz) contribution.
Keywords :
III-V semiconductors; Schottky-barrier diodes; beam-lead devices; electron device noise; gallium arsenide; solid-state microwave devices; EHF; GaAs beam lead Schottky diode; IF 30 MHz; III-V semiconductors; MM-waves; airbridge; fabrication; frequency 94 GHz; glass reinforced beam lead Schottky diode; low SSB noise figure; low single; measurement; millimetre wavelengths;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840536
