p-type silicon drift detectors: first results

Author

Wang, N.W. ; Krieger, B. ; Krofcheck, D. ; Lewak, D. ; Naudet, C.J. ; Donnell, R.O. ; Odyniec, G. ; Partlan, M. ; Rudolph, H.W. ; Walton, J.T. ; Wilson, W.K.

Author_Institution

Lawrence Berkeley Lab., CA, USA

Volume

42

Issue

4

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

214

Lastpage

218

Abstract

We have fabricated a 4 cm×4 cm, position-sensitive silicon drift detector using high purity, p-type silicon as the substrate. In this paper, we describe the double-sided planar process used to fabricate the detectors and the strategy used to suppress surface carrier inversion due to the presence of fixed positive charge at the Si-SiO₂ interface. The key issue in optimizing the fabrication process has been to minimize leakage currents and prevent breakdown at low voltages. Tests show that a drift signal can be measured across the entire length of the detector and that the transit time of the holes varies linearly with the position of the induced charge signal

Keywords

leakage currents; position sensitive particle detectors; silicon radiation detectors; 4 cm; Si; Si drift detectors; Si-SiO₂; Si-SiO₂ interface; breakdown; double-sided planar process; fabrication; high purity; holes; leakage currents; p-type; position-sensitive; surface carrier inversion; Breakdown voltage; Charge measurement; Current measurement; Fabrication; Leakage current; Length measurement; Low voltage; Position sensitive particle detectors; Silicon; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.467847

Filename

467847