• DocumentCode
    994477
  • Title

    Nonlinearity in GaAs FET power amplifying devices

  • Author

    Cheng, T.C. ; Shurmer, H.V.

  • Author_Institution
    Bell-Northern Research, Ottawa, Canada
  • Volume
    20
  • Issue
    19
  • fYear
    1984
  • Firstpage
    788
  • Lastpage
    790
  • Abstract
    Modern microwave communication systems rely heavily on the linearity of output stages incorporating GaAs FET power amplifying devices. This letter describes a system for the automatic nonlinearity measurement in such devices of gain and phase angle as functions of input power level and frequency, with results leading to significantly improved system performance.
  • Keywords
    III-V semiconductors; electric distortion measurement; field effect transistors; gallium arsenide; microwave amplifiers; microwave links; power amplifiers; solid-state microwave devices; GaAs FET power amplifying devices; III-V semiconductors; automatic nonlinearity measurement; delta gain measurement; delta phase measurement; function of frequency; functions of input power level; gain measurement; linearity; microwave communication systems; phase angle measurement;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840537
  • Filename
    4249046
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=994477