DocumentCode :
9945
Title :
A Switched Inductor Topology Using a Switchable Artificial Grounded Metal Guard Ring for Wide-FTR MMW VCO Applications
Author :
Pen-Li You ; Tzuen-Hsi Huang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
60
Issue :
2
fYear :
2013
fDate :
Feb. 2013
Firstpage :
759
Lastpage :
766
Abstract :
In conventional integrated circuit technologies, a grounded metal guard ring (MGR) is widely used to mitigate the coupling effect between any pair of inductors. Full-wave electromagnetic (EM) simulation results indicate that the guard ring size can significantly affect the inductance value of a single-turn planar inductor. This paper proposes a switchable artificial grounded MGR technique that can not only serve as a guard ring but also change the inductance. Accordingly, an inductor, featuring switchable inductance and high quality factor, is developed for a 60-GHz millimeter-wave wide-frequency tuning range (wide-FTR) and low phase-noise voltage-controlled oscillator (VCO) in 90-nm bulk CMOS technology. The VCO testkey achieves a total tuning range of 9.43 GHz (17%). The measured phase noise levels are -92.2 and -119 dBc/Hz at 1- and 10-MHz offsets, respectively. The experimental results demonstrate that the proposed inductor topology offers the VCO an increase of 36% in the FTR and a competitive performance in phase noise, as contrasted with a conventional varactor-tuned VCO. This VCO achieves a record of -188 dBc/Hz for the FOMT.
Keywords :
CMOS analogue integrated circuits; Q-factor; field effect MIMIC; phase noise; voltage-controlled oscillators; CMOS technology; VCO testkey; coupling effect mitigation; frequency 60 GHz; frequency 9.43 GHz; frequency tuning range; full-wave EM simulation; full-wave electromagnetic simulation; inductance value; integrated circuit technologies; low-phase-noise voltage-controlled oscillator; quality factor; single-turn planar inductor; size 90 nm; switchable artificial grounded MGR technique; switchable artificial grounded metal guard ring; switched inductor topology; varactor-tuned VCO; wide-FTR MMW VCO applications; Inductance; Inductors; Q factor; Switches; Switching circuits; Tuning; Voltage-controlled oscillators; Artificial grounded metal guard ring (MGR); inductive coupling effect; millimeter-wave (MMW) voltage-controlled oscillator (VCO); switched inductor; wide-tuning oscillator;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2234750
Filename :
6410409
Link To Document :
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