Title :
100 Mbit/s laser diode terminal with optical gain for fibre-optic local area networks
Author :
Alping, A. ; Bentland, B. ; Eng, S.T.
Author_Institution :
Chalmers University of Technology, Department of Electrical Measurements, Gothenburg, Sweden
Abstract :
The feasibility of using a single GaAlAs buried-heterostructure laser as a multifunctional terminal on a fibre-optic bus has been demonstrated. During the reception period the received optical signal is simultaneously tapped for the information and optically amplified for further transmission. During the transmitting period the laser diode terminal works as a conventional optical emitter. A 100 Mbit/s transmission experiment gave a received bit error rate of less than 10¿9 with a simultaneous optical gain of 3.5 dB.
Keywords :
III-V semiconductors; aluminium compounds; computer networks; gallium arsenide; optical communication equipment; optical fibres; optical links; semiconductor junction lasers; 100 Mbit/s laser diode terminal; 100 Mbit/s transmission experiment; BH-BOG lasers; III-V semiconductors; feasibility; fibre-optic bus; fibre-optic local area networks; multifunctional terminal; optical emitter; optical fibre LAN; optical gain; optically amplified; received bit error rate; reception period; simultaneous optical gain; single GaAlAs buried-heterostructure laser; transmitting period;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840540
