DocumentCode :
994538
Title :
Fabrication of Nb3 Ge/Si(SiOx )/Pb Josephson tunneling junction
Author :
Ihara, H. ; Kimura, Y. ; Okumura, H. ; Gonda, S.
Author_Institution :
Electrotechnical Laboratory, Sakura-mura, Niihari-gun, Ibaraki, Japan
Volume :
19
Issue :
3
fYear :
1983
fDate :
5/1/1983 12:00:00 AM
Firstpage :
938
Lastpage :
941
Abstract :
The Josephson junction of Nb3 Ge was fabricated by using a Si(SiOx ) thin film as the tunnel barrier and Pb as a counter electrode. The thickness of the Si barrier is 2 nm, and the junction size is 0.5 × 0.5 mm2. The critical current of the junction was 8 ∼ 12 Acm-2. the normal-state tunneling resistance was 
cm2 . The onset voltage of gap was 5.2 mV. The Shapiro step mode and the Fiske step mode were observed in a well-defined shape. The dependence of maximum dc-Josephson current upon external magnetic field gives the penetration depth of Nb3 Ge of 130 nm. The dependence of the resonance voltage upon external magnetic field gives the dielectric constant 8.7 of the Si(SiOx ) barrier.
cmKeywords :
Josephson devices; Counting circuits; Critical current; Electrodes; Fabrication; Josephson junctions; Magnetic fields; Niobium; Transistors; Tunneling; Voltage;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1983.1062416
Filename :
1062416
Link To Document :
