Expected performances of GaAlAs/GaAs double-velocity heterojunction impatt diodes

Author

De Jaeger, J.C. ; Kozlowski, R. ; Salmer, G.

Author_Institution

UniversitÃ© de Lille I, Centre Hyperfrequences & Semiconducteurs, LA CNRS No. 287, Villeneuve d´Ascq, France

Volume

20

Issue

19

fYear

1984

Firstpage

803

Lastpage

804

Abstract

A novel heterojunction avalanche transit-time diode with low-high-low doping profile is proposed. The avalanche ionisation occurs only in a low doping GaAs zone and the drift zone incorporates high (GaAlAs) and low (GaAs) doping materials having different saturated drift velocities. Potential performances of the structure are analysed in the X-band and in the millimetre-wave range using computer simulations. Theoretical predictions show an important improvement of the conversion efficiency in comparison with GaAs low-high-low impatt diodes.

Keywords

III-V semiconductors; IMPATT diodes; aluminium compounds; digital simulation; doping profiles; gallium arsenide; semiconductor device models; EHF; GaAlAs; GaAlAs/GaAs double-velocity heterojunction impatt diodes; GaAs; III-V semiconductors; X-band; avalanche ionisation; computer simulations; conversion efficiency; different saturated drift velocities; drift zone; heterojunction avalanche transit-time diode; high doping zone; low doping zone; low-high-low doping profile; millimetre-wave range; performances; predictions;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19840546

Filename

4249055