Title :
Intermodal injection locking of semiconductor lasers
Author :
Goldberg, L. ; Taylor, H.F. ; Weller, J.F.
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
Injection locking of a GaAlAs laser by coupling into non-lasing Fabry-Perot modes is described. Locking of a slave laser mode as far as 22 mode spacings (60 Å) away from the gain curve centre is obtained. The dependence of the locking bandwidth on the injected power and the wavelength separation between the free-running and injected mode (¿¿) is described. The dependence of the power required for locking on the magnitude of ¿¿ is consistent with a 192 Å-wide quadratic gain profile.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; semiconductor junction lasers; GaAlAs laser; injected power; intermodal injection locking; locking bandwidth; nonlasing Fabry Perot modes; quadratic gain profile; semiconductor lasers; slave laser mode; wavelength separation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840550
