• DocumentCode
    994631
  • Title

    Intermodal injection locking of semiconductor lasers

  • Author

    Goldberg, L. ; Taylor, H.F. ; Weller, J.F.

  • Author_Institution
    Naval Research Laboratory, Washington, USA
  • Volume
    20
  • Issue
    20
  • fYear
    1984
  • Firstpage
    809
  • Lastpage
    811
  • Abstract
    Injection locking of a GaAlAs laser by coupling into non-lasing Fabry-Perot modes is described. Locking of a slave laser mode as far as 22 mode spacings (60 Å) away from the gain curve centre is obtained. The dependence of the locking bandwidth on the injected power and the wavelength separation between the free-running and injected mode (¿¿) is described. The dependence of the power required for locking on the magnitude of ¿¿ is consistent with a 192 Å-wide quadratic gain profile.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; semiconductor junction lasers; GaAlAs laser; injected power; intermodal injection locking; locking bandwidth; nonlasing Fabry Perot modes; quadratic gain profile; semiconductor lasers; slave laser mode; wavelength separation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840550
  • Filename
    4249060
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=994631