Title :
A study of the electrical performances of isolation structures
Author :
Dubois, Emmanuel ; Coppée, Jean-louis ; Baccus, Bruno ; Collard, Dominique
Author_Institution :
Inst. Superieur d´´Electron. du Nord, Lille, France
fDate :
6/1/1990 12:00:00 AM
Abstract :
The electrical properties of field oxide isolation structures are investigated from the device physics point of view. The importance of the potential barrier formation mechanism is clearly demonstrated through the derivation of an analytical formulation of the subthreshold current. The current independence on the isolation device length is clearly established. A large range of ideal field oxide geometries is systematically characterized to demonstrate the effect of two key parameters: the amount of buried oxide and the bird´s-beak slope. The predicted isolation performances are verified on semirecessed and fully recessed structures by means of process/device simulations and experimental data. Good agreement is found between measured and calculated subthreshold currents
Keywords :
VLSI; integrated circuit technology; semiconductor device models; Si-SiO2; amount of buried oxide; analytical formulation; bird´s-beak slope; device physics; electrical performances; electrical properties; experimental data; field oxide isolation structures; fully recessed structures; ideal field oxide geometries; key parameters; potential barrier formation mechanism; semirecessed structures; subthreshold current; Current measurement; Geometry; Oxidation; Physics; Poisson equations; Predictive models; Shape; Silicon; Subthreshold current; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on