DocumentCode :
994700
Title :
A study of the electrical performances of isolation structures
Author :
Dubois, Emmanuel ; Coppée, Jean-louis ; Baccus, Bruno ; Collard, Dominique
Author_Institution :
Inst. Superieur d´´Electron. du Nord, Lille, France
Volume :
37
Issue :
6
fYear :
1990
fDate :
6/1/1990 12:00:00 AM
Firstpage :
1477
Lastpage :
1486
Abstract :
The electrical properties of field oxide isolation structures are investigated from the device physics point of view. The importance of the potential barrier formation mechanism is clearly demonstrated through the derivation of an analytical formulation of the subthreshold current. The current independence on the isolation device length is clearly established. A large range of ideal field oxide geometries is systematically characterized to demonstrate the effect of two key parameters: the amount of buried oxide and the bird´s-beak slope. The predicted isolation performances are verified on semirecessed and fully recessed structures by means of process/device simulations and experimental data. Good agreement is found between measured and calculated subthreshold currents
Keywords :
VLSI; integrated circuit technology; semiconductor device models; Si-SiO2; amount of buried oxide; analytical formulation; bird´s-beak slope; device physics; electrical performances; electrical properties; experimental data; field oxide isolation structures; fully recessed structures; ideal field oxide geometries; key parameters; potential barrier formation mechanism; semirecessed structures; subthreshold current; Current measurement; Geometry; Oxidation; Physics; Poisson equations; Predictive models; Shape; Silicon; Subthreshold current; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.106243
Filename :
106243
Link To Document :
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