Title :
GaAs/LB film MISS switching device
Author :
Thomas, N.J. ; Petty, Michael C. ; Roberts, G.G. ; Hall, H.Y.
Author_Institution :
University of Durham, Department of Applied Physics & Electronics, Durham, UK
Abstract :
MISS switches incorporating Langmuir-Blodgett films as insulating layers are reported for the first time. Devices fabricated using n on p+ GaAs and including a 9 nm-thick ¿-tricosenoic acid insulating layer are shown to possess good characteristics. The results indicate that switching occurs due to a `punch-through¿ mechanism.
Keywords :
III-V semiconductors; Langmuir-Blodgett films; gallium arsenide; metal-insulator-semiconductor devices; semiconductor switches; GaAs; Langmuir-Blodgett films; MISS switching device; insulating layers; punchthrough mechanism; semiconductor switch; ¿-tricosenoic acid;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840569
